LABORATORI NAZIONALI DI LEGNARO
Germanium is the main candidate for replacing Silicon in active regions in future Complementary Metal-Oxide Semiconductor (CMOS) devices due to its higher charge carrier mobility as well as its compatibility with the already existing Si-based technology. However, in order to fulfill the future technological nodes, it is necessary to keep the trend in downscaling junctions depths while pushing the limit of doping levels beyond their solid solubility. For this reasons, the interest in Excimer Laser Annealing (ELA) in the melting regime is renewed as an advanced activation method of implanted dopants in Ge because of its potential capability of increasing the dopant activation as well as of reducing the diffusion path. Among the most common dopants, experimental results on ELA subsequent to ion-implantation of both Boron as p-type and on Arsenic as n-type will be presented. Samples have been characterized by Secondary Ion Mass Spectrometry (SIMS), Spreading Resisting Profiling (SRP), Transmission Electron Microscope (TEM) and High Resolution X-Ray Diffraction (HR-XRD) which provide a relation between the dopant diffusion, the electrical activation, the residual point defects and the strain profiles respectively.

DATA: 27-02-2014